例句與用法

1. P - type silicon crystal plates have been adopted in the text , which are formed mask sio2 by heat - oxygenation . and figures are diverted by normal light etching technology
   本文采用p型單晶硅片，由熱氧化形成sio _ 2掩膜層，標準光刻工藝進行圖形轉(zhuǎn)移，用koh溶液濕法刻蝕制作倒四棱錐腐蝕坑列陣。
2. 1 successively depositing cbn thin films on si substrates which reaches international advanced level , the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied . boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system . the target was hexagonal boron nitride ( hbn ) of 4n purity , and the working gas was the mixture of nitrogen and argon
   研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。